MLCC

MLCC (Multi-layer Ceramic Capacitors) is the abbreviation of chip multi-layer ceramic capacitors. It is composed of ceramic dielectric diaphragm with printed electrode (inner electrode), which is superimposed in a misplaced way. After one-time high temperature sintering, ceramic chip is formed, and then the two ends of the chip are sealed with metal layer (outer electrode), thus forming a structure similar to monolith, so it is also called monolith capacitor.

Tantalum capacitor

Tantalum capacitor is a product of small size and large capacitance. It was first developed by Bell Laboratories in 1956 and has excellent performance. Tantalum capacitors come in a variety of shapes and are made into small and chip components suitable for surface mount. Tantalum capacitors are not only used in military communication, aerospace and other fields, but also widely used in industrial control, film and television equipment, communication instruments and other products.

Aluminum electrolytic capacitor

Aluminum electrolytic capacitors are made of an aluminum cylinder as a negative electrode, which contains a liquid electrolyte and is inserted into a curved aluminum strip as a positive electrode. It also needs to be processed by DC voltage to form an oxide film on the positive electrode plate as a medium. It is characterized by large capacity, but large leakage, poor stability, positive and negative polarity, suitable for power filter or low frequency circuit. When in use, do not connect the positive and negative terminals.

Patch resistance

* Small size, light weight * suitable for reflow and wave soldering * stable electrical performance, high reliability * low assembly cost, and matching with automatic SMT equipment * In line with RoHS instruction and halogen free products are widely used in computers, communications, industrial automation, aerospace, military, digital television, digital audio, navigation (GPS),

SMD Resistor

贴片电阻(SMD Resistor)又名片式固定电阻器(Chip Fixed Resistor) ，是金属玻璃釉电阻器中的一种。是将金属粉和玻璃釉粉混合，采用丝网印刷法印在基板上制成的电阻器 。耐潮湿和高温， 温度系数小。可大大节约电路空间成本，使设计更精细化。

Cement resistance

Integrated molded inductor

Integrated forming inductance (molded inductance) comprises a base body and a winding body, the base system winding body is buried in the metal magnetic powder internal die-casting, SMD pin winding body lead foot directly formed on the surface of the base body, the utility model has higher inductance and smaller leakage inductance than the traditional inductance; The inductor is designed with SMD structure, which will not damage the inductor and improve the production efficiency.

Color ring inductance

Color ring inductor common specifications: 0204, 0307, 0410, 0510, 0512, etc

Wound chip inductor

Winding chip inductors are generally used for oscillating, delaying, trapping and filtering. In the conventional circuit, the coil of the winding inductor acts on the AC finite current, and it can form a high-pass or low-pass filter, phase-shifting circuit and resonant circuit with a resistor or capacitor. Secondly, the winding through the transformer can be AC coupling, transformer, transformer and impedance conversion function control.

Rectifier diode

A semiconductor device that converts alternating current energy into direct current energy. Usually it contains a PN junction with two terminals, positive and negative. The most important characteristic of a diode is its conductivity in one direction. In a circuit, current can only flow in from the positive side of the diode and out from the negative side.

Schottky diode

Schottky diode is named after its inventor, Dr. Schottky. SBD is short for SchottkyBarrierDiode. SBD is not made on the principle of PN junction formed by contact between P-type semiconductor and N-type semiconductor, but on the principle of metal-semiconductor junction formed by contact between metal and semiconductor. Therefore, SBD is also called metal-semiconductor (contact) diode or surface barrier diode, it is a type of hot carrier diode.

Stabilized secondary pipe

Voltage regulator diode refers to the use of pn junction reverse breakdown state, the current can be changed in a wide range of voltage is basically unchanged, made of voltage regulator diode.

Composite pipe

Two or more electrode systems are installed in the shell of an electron tube. Each electrode system realizes its own function independently through the electron flow. This kind of electron tube is called composite tube. Compound tube refers to the use of two or more audion according to a certain law of combination, equivalent to a triode, compound tube is also known as Darlington tube.

Transistor

The transistor is a solid semiconductor device (diode, triode, field-effect tube, thyristor, and sometimes bipolar device) with many functions, such as detection, rectification, amplification, switching, voltage regulation, and signal modulation. As a kind of variable current switch, the transistor can control the output current based on the input voltage. Unlike ordinary mechanical switches (such as Relay and switch), transistors use electrical signals to control their own opening and closing, so the switching speed can be very fast, and the switching speed in the laboratory can reach more than 100GHz.

Medium voltage MOS

metal - oxide - semiconductor field effect transistor, referred to as "by oxygen effect transistor, is a kind of can be widely used in analog circuit and digital circuit field-effect transistors.

Medium and low pressure MOS

Metal-oxide semiconductor field effect transistor, The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a field-effect transistor widely used in analog and digital circuits. MOSFET according to its "channel" (working carrier) polarity is different, can be divided into "N type" and "P type" of two types, usually known as NMOSFET and PMOSFET, other abbreviation includes NMOS, PMOS, etc

High voltage MOS

The voltage of high-voltage MOS tube is about 400V~1000V, and the reaction speed of high-voltage MOS tube is slower than that of low-voltage MOS tube.

Thermistor

Thermistor is a kind of sensitive element, which can be divided into positive thermistor (PTC) and negative thermistor (NTC) according to different temperature coefficients. The typical characteristic of thermistor is sensitive to temperature, and different temperature shows different resistance values. Positive temperature coefficient thermistor (PTC) has higher resistance value when the temperature is higher, and negative temperature coefficient thermistor (NTC) has lower resistance value when the temperature is higher. Both of them belong to semiconductor devices.

Photoresistor

photoresistor or light-dependent resistor (ldr) or photoconductor is commonly made of cadmium sulfide, in addition to selenium, aluminum sulfide, lead sulfide and bismuth sulfide. These materials have the property that the resistance value decreases rapidly under specific wavelength of light. This is because the carriers generated by light are involved in conducting electricity, and drift motion under the action of the applied electric field. The electrons rush to the positive terminal of the power supply and the holes rush to the negative terminal of the power supply, so that the resistance value of the photoresistor decreases rapidly.

Vvaristor

"Varistor" is a resistance device with nonlinear voltammetry characteristics. It is mainly used for voltage clamp when the circuit is under overvoltage, absorbing excess current to protect the sensitive device. The English name is "Voltage Dependent Resistor" short for "VDR", or" Varistor". The resistance material of a varistor is semi-conductive

IC

集成电路（integrated circuit，港台称之为积体电路）是一种微型电子器件或部件。采用一定的工艺，把一个电路中所需的晶体管、二极管、电阻、电容和电感等元件及布线互连一起，制作在一小块或几小块半导体晶片或介质基片上，然后封装在一个管壳内，成为具有所需电路功能的微型结构；其中所有元件在结构上已组成一个整体，从而使电子元件向着微小型化、低功耗和高可靠性方面迈进了一大步。 它在电路中用字母“ic”（也有用文字符号“n”等）表示。

IGBT

IGBT(Insulated Gate Bipolar Transistor)，绝缘栅双极型晶体管，是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件, 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。GTR饱和压降低，载流密度大，但驱动电流较大；MOSFET驱动功率很小，开关速度快，但导通压降大，载流密度小。IGBT综合了以上两种器件的优点，驱动功率小而饱和压降低。