Schottky diode
Schottky diode is named after its inventor, Dr. Schottky. SBD is short for SchottkyBarrierDiode. SBD is not made on the principle of PN junction formed by contact between P-type semiconductor and N-type semiconductor, but on the principle of metal-semiconductor junction formed by contact between metal and semiconductor. Therefore, SBD is also called metal-semiconductor (contact) diode or surface barrier diode, it is a type of hot carrier diode.
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Description

The main advantages of SBD include two aspects:

1) Because the Schottky barrier height is lower than the PN junction barrier height, the forward gateway voltage and forward voltage drop are lower than the PN junction diode (about 0.2V).

2) Since SBD is a majority carrier conducting device, there is no minority carrier lifetime and reverse recovery problem. The reverse recovery time of SBD is only the charging and discharging time of Schottky barrier capacitor, which is completely different from the reverse recovery time of PN junction diode. Since the reverse recovery charge of SBD is very small, the switching speed is very fast and the switching loss is particularly small, which is especially suitable for high-frequency applications.

However, the reverse breakdown voltage is low because of the thin reverse barrier and the easy breakdown at the surface of the SBD. Since SBD is more susceptible to thermal breakdown than PN junction diode, the reverse leakage current is larger than PN junction diode.

Schottky diode, also known as Schottky barrier diode (SBD for short), it belongs to a low power consumption, ultra-high speed semiconductor device. The most notable feature is that the reverse recovery time is very short (can be as small as a few nanoseconds), and the positive guide voltage drop is only about 0.4V. It is used as high frequency, low voltage, large current rectifier diode, continuous current diode, protection diode, also useful in microwave communication and other circuits for rectifier diode, small signal detection diode use. It is common in communication power supply, frequency converter and so on.

A typical application is to increase the switching speed of bipolar BJTS by attaching Shockley diodes to the BJTS to clamp them so that the transistor is actually very close to the cut-off state when it is on. This method is used in TTL internal circuits of typical digital ics such as 74LS, 74ALS, 74AS, etc.

Schottky diode is the biggest characteristic of the forward voltage drop VF is relatively small. It has a much smaller forward voltage drop for the same current. In addition, its recovery time is short. It also has some disadvantages: the voltage is relatively low, leakage current is slightly larger. Consider all aspects when choosing.

Specification parameter

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