MOS tube is metal, oxide, semiconductor field effect transistor, or metal - insulator, semiconductor. source and drain of MOS tube can be switched. They are both N-type regions formed in P-type backgate. In most cases, the two regions are the same, and even if the two ends are switched, the performance of the device will not be affected.

(1) It uses a majority of carriers to conduct electricity, so it has good temperature stability

(2) The input current of the field effect tube is very small, so its input resistance is very large

(3) The field effect tube is a voltage control device, which controls ID through VGS

(4) the voltage amplification factor of the amplifier circuit is smaller than the voltage amplification factor of the amplifier circuit composed of triode

(5) The field effect tube has strong anti-radiation ability

(6) The noise is low because there is no loose particle noise caused by the diffusion of the few particles of chaotic motion